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GD15PJX65F1S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated heatsink using DBC technology Typical.

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Datasheet preview – GD15PJX65F1S

Datasheet Details

Part number GD15PJX65F1S
Manufacturer STARPOWER
File Size 236.52 KB
Description IGBT
Datasheet download datasheet GD15PJX65F1S Datasheet
Additional preview pages of the GD15PJX65F1S datasheet.

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Full PDF Text Transcription

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GD15PJX65F1S STARPOWER SEMICONDUCTOR GD15PJX65F1S 650V/15A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated heatsink using DBC technology Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2018 STARPOWER Semiconductor Ltd.
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