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GD200CLX65C2S - IGBT

Datasheet Summary

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as inductive heating.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology Typical.

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Datasheet preview – GD200CLX65C2S

Datasheet Details

Part number GD200CLX65C2S
Manufacturer STARPOWER
File Size 609.46 KB
Description IGBT
Datasheet download datasheet GD200CLX65C2S Datasheet
Additional preview pages of the GD200CLX65C2S datasheet.

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Full PDF Text Transcription

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GD200CLX65C2S STARPOWER SEMICONDUCTOR GD200CLX65C2S 650V/200A chopper in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as inductive heating. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Switching mode power supply  Inductive heating  Electronic welder Equivalent Circuit Schematic IGBT Module IGBT ©2021 STARPOWER Semiconductor Ltd.
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