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GD200FFX120P3SA - IGBT

Datasheet Summary

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as hybrid and electric vehicle.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology Typical.

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Datasheet preview – GD200FFX120P3SA

Datasheet Details

Part number GD200FFX120P3SA
Manufacturer STARPOWER
File Size 303.75 KB
Description IGBT
Datasheet download datasheet GD200FFX120P3SA Datasheet
Additional preview pages of the GD200FFX120P3SA datasheet.

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Full PDF Text Transcription

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GD200FFX120P3SA STARPOWER SEMICONDUCTOR GD200FFX120P3SA 1200V/200A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Automotive application  Hybrid and electric vehicle  Inverter for motor drive Equivalent Circuit Schematic IGBT Module IGBT ©2022 STARPOWER Semiconductor Ltd.
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