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GD200HFQ120C2S - IGBT

Datasheet Summary

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as electronic welder and inductive heating.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology Typical.

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Datasheet preview – GD200HFQ120C2S

Datasheet Details

Part number GD200HFQ120C2S
Manufacturer STARPOWER
File Size 350.64 KB
Description IGBT
Datasheet download datasheet GD200HFQ120C2S Datasheet
Additional preview pages of the GD200HFQ120C2S datasheet.

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Full PDF Text Transcription

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GD200HFQ120C2S STARPOWER SEMICONDUCTOR GD200HFQ120C2S 1200V/200A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Switching mode power supply  Inductive heating  Electronic welder Equivalent Circuit Schematic IGBT Module IGBT ©2021 STARPOWER Semiconductor Ltd.
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