GD200HFY120C8S
Description
STARPOWER IGBT Power Module provides ultra ultrafast switching speed as well as short circuit. ruggedness.They are designed for the applications such as welding machine and inductive heating.
Features
- Low VCE(sat) Trench IGBT technology
- Low switching loss
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175o C
- Fast & soft reverse recovery anti-parallel FWD
- Low inductance case
- Isolated copper baseplate using DBC technology
Typical Applications
- Switching mode power supply
- Inductive heating
- Welding machine
Equivalent Circuit Schematic
IGBT Module
IGBT
©2016 STARPOWER Semiconductor Ltd.
3/1/2016
1/9
SN0A
IGBT Module
Absolute Maximum Ratings TC=25o C unless otherwise noted
IGBT
Symbol VCES VGES
ICM PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage Collector Current @ TC=25o C
@ TC=100o C
Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175o...