STARPOWER GD200MLT120C2S
IGBT
| Part No. | GD200MLT120C2S |
|---|---|
| Datasheet | GD200MLT120C2S Download |
| Manufacturer |  STARPOWER |
| Description | IGBT |
| Buy | Stock & Price |
GENERAL DESCRIPTION
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-applications.FEATURES
● Low VCE(sat) trench IGBT technology● Low switching loss
● 10μs short circuit capability
● Low inductance case
● VCE(sat) with positive temperature coefficient
● Fast & soft reverse recovery anti-parallel FWD
● Isolated copper baseplate using DBC technology Typical
APPLICATIONS
● Solar power● UPS
● 3-Level-
APPLICATIONS
©2011 STARPOWER Semiconductor Ltd. 7/5/2011 1/11 Preliminary GD200MLT120C2S IGBT Module IGBT T1 T2 T3 T4 TC=25℃ unless otherwise noted Maximum Rated Values Symbol VCES VGES IC ICM PtotDESCRIPTION
Collector-Emitter Voltage @ Tj=25℃ Gate-Emitter Voltage @ Tj=25℃ Collector Current @ TC=25℃ @ TC=80℃ Pulsed Collector Current tp=1ms Total Power Dissipation @ Tj=175℃ GD200MLT120C2S 1200 ±20 360 200 400 1163 Units V V A A W Off Characteristics Symbol V(BR)CES ICES IGES Parameter C...
