GD200MLT120C2S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as 3-level-applications.

Features

Low VCE(sat) trench IGBT technology.
Low switching loss.
10μs short circuit capability.
Low inductance case.
VCE(sat) with positive temperature coefficient.
Fast & soft reverse recovery anti-parallel FWD.
Isolated copper baseplate using DBC technology Typical.

STARPOWER

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Datasheet Details

Part number	GD200MLT120C2S
Manufacturer	STARPOWER
File Size	435.78 KB
Description	IGBT
Datasheet	GD200MLT120C2S Datasheet
Additional preview pages of the GD200MLT120C2S datasheet.

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Full PDF Text Transcription

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GD200MLT120C2S STARPOWER SEMICONDUCTOR GD200MLT120C2S Molding Type Module 1200V/200A 3-level in one-package IGBT Module IGBT General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-applications. Features  Low VCE(sat) trench IGBT technology  Low switching loss  10μs short circuit capability  Low inductance case  VCE(sat) with positive temperature coefficient  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Solar power  UPS  3-Level-Applications ©2011 STARPOWER Semiconductor Ltd.

Published: Jul 19, 2025 |