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GD20FSX65L4SN - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated heatsink using DBC technology Typical.

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Datasheet preview – GD20FSX65L4SN

Datasheet Details

Part number GD20FSX65L4SN
Manufacturer STARPOWER
File Size 442.54 KB
Description IGBT
Datasheet download datasheet GD20FSX65L4SN Datasheet
Additional preview pages of the GD20FSX65L4SN datasheet.

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Full PDF Text Transcription

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GD20FSX65L4SN STARPOWER SEMICONDUCTOR GD20FSX65L4SN 650V/20A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated heatsink using DBC technology Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2024 STARPOWER Semiconductor Ltd.
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