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GD225MJS120L6S Datasheet IGBT

Manufacturer: STARPOWER

General Description

STARPOWER IGBT Power Module provides ultra low conduction loss.They are designed for the applications such as 3-level-application.

Overview

GD225MJS120L6S STARPOWER SEMICONDUCTOR GD225MJS120L6S 1200V/225A 3-level in.

Key Features

  • Low VCE(sat) Trench IGBT technology.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175 oC.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology Typical.