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GD225MJS120L6S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss.They are designed for the applications such as 3-level-application.

Features

  • Low VCE(sat) Trench IGBT technology.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175 oC.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology Typical.

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Datasheet preview – GD225MJS120L6S

Datasheet Details

Part number GD225MJS120L6S
Manufacturer STARPOWER
File Size 620.46 KB
Description IGBT
Datasheet download datasheet GD225MJS120L6S Datasheet
Additional preview pages of the GD225MJS120L6S datasheet.

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Full PDF Text Transcription

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GD225MJS120L6S STARPOWER SEMICONDUCTOR GD225MJS120L6S 1200V/225A 3-level in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss.They are designed for the applications such as 3-level-application. Features  Low VCE(sat) Trench IGBT technology  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175 oC  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Solar power  3-level-application Equivalent Circuit Schematic IGBT Module IGBT ©2024 STARPOWER Semiconductor Ltd.
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