STARPOWER GD225MJS120L6S
IGBT
| Part No. | GD225MJS120L6S |
|---|---|
| Datasheet | GD225MJS120L6S Download |
| Manufacturer |  STARPOWER |
| Description | IGBT |
| Buy | Stock & Price |
GENERAL DESCRIPTION
STARPOWER IGBT Power Module provides ultra low conduction loss.They are designed for the applications such as 3-level-application.FEATURES
● Low VCE(sat) Trench IGBT technology● VCE(sat) with positive temperature coefficient
● Maximum junction temperature 175 oC
● Fast & soft reverse recovery anti-parallel FWD
● Isolated copper baseplate using DBC technology Typical
APPLICATIONS
● Solar power● 3-level-application Equivalent Circuit Schematic IGBT Module IGBT ©2024 STARPOWER Semiconductor Ltd. 10/10/2024 1/15 B02 GD225MJS120L6S IGBT Module
ABSOLUTE MAXIMUM RATINGS
TC=25oC unless otherwise noted T1/T4 IGBT SymbolDESCRIPTION
Value Unit VCES Collector-Emitter Voltage 1200 V VGES Gate-Emitter Voltage ±20 V ICN Implemented Collector Current IC Collector Current @ TC=100oC 225 A 112 A ICRM Repetitive Peak Collector Current tp limited by Tvjop 450 A T2/T3 IGBT SymbolDESCRIPTION
Value Unit VCES Collector-Emitter Voltage 1200 V VGES Gate-Emitter Voltage ±20 V ICN Impleme...
