GD225MJS120L6S
Description
STARPOWER IGBT Power Module provides ultra low conduction loss.They are designed for the applications such as 3-level-application.
Features
- Low VCE(sat) Trench IGBT technology
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175 o C
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- Solar power
- 3-level-application
Equivalent Circuit Schematic
IGBT Module
IGBT
©2024 STARPOWER Semiconductor Ltd.
10/10/2024
1/15
B02
IGBT Module
Absolute Maximum Ratings TC=25o C unless otherwise noted
T1/T4 IGBT
Symbol
Description
Value
Unit
VCES
Collector-Emitter Voltage
VGES
Gate-Emitter Voltage
±20
Implemented Collector Current
Collector Current @ TC=100o C
ICRM
Repetitive Peak Collector Current tp limited by...
