GD275MJS120L6S Key Features
- Low VCE(sat) Trench IGBT technology
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175 oC
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using Si3N4 AMB technology
- Part: GD275MJS120L6S
- Manufacturer: STARPOWER
- Size: 614.00 KB
Related STARPOWER Datasheets
| Part Number | Description |
|---|---|
| GD200CLX65C2S | IGBT |
| GD200CUY120C2S | IGBT |
| GD200FFX120P3SA | IGBT |
| GD200FFX65C6S | IGBT |
| GD200FFX65C6SF | IGBT |
GD275MJS120L6S Description
STARPOWER IGBT Power Module provides ultra low conduction loss.They are designed for the applications such as 3-level-application.