STARPOWER GD275MJS120L6S
IGBT
| Part No. | GD275MJS120L6S |
|---|---|
| Datasheet | GD275MJS120L6S Download |
| Manufacturer |  STARPOWER |
| Description | IGBT |
| Buy | Stock & Price |
GENERAL DESCRIPTION
STARPOWER IGBT Power Module provides ultra low conduction loss.They are designed for the applications such as 3-level-application.FEATURES
● Low VCE(sat) Trench IGBT technology● VCE(sat) with positive temperature coefficient
● Maximum junction temperature 175 oC
● Fast & soft reverse recovery anti-parallel FWD
● Isolated copper baseplate using Si3N4 AMB technology Typical
APPLICATIONS
● Solar power● 3-level-application Equivalent Circuit Schematic ©2024 STARPOWER Semiconductor Ltd. 10/10/2024 1/15 Preliminary GD275MJS120L6S IGBT Module
ABSOLUTE MAXIMUM RATINGS
TC=25oC unless otherwise noted T1-T4 IGBT Symbol VCES VGES ICN IC ICMDESCRIPTION
Collector-Emitter Voltage Gate-Emitter Voltage Implemented Collector Current Collector Current @ TC=100oC Pulsed Collector Current tp=1ms D1/D4 Diode Symbol VRRM IFN IF IFMDESCRIPTION
Repetitive Peak Reverse Voltage Implemented Forward Current Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms D2/D3 Diode S...
