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GD300MNY120C6S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as 3-level-applications.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology Typical.

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Datasheet preview – GD300MNY120C6S

Datasheet Details

Part number GD300MNY120C6S
Manufacturer STARPOWER
File Size 206.30 KB
Description IGBT
Datasheet download datasheet GD300MNY120C6S Datasheet
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GD300MNY120C6S STARPOWER SEMICONDUCTOR GD300MNY120C6S 1200V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-applications. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Solar power  UPS  3-level-applications Equivalent Circuit Schematic IGBT Module IGBT ©2018 STARPOWER Semiconductor Ltd.
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