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GD30MLX65F1SF_B22 - IGBT

Datasheet Summary

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as 3-level-application.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated heatsink using DBC technology.
  • PressFIT contact technology Typical.

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Datasheet preview – GD30MLX65F1SF_B22

Datasheet Details

Part number GD30MLX65F1SF_B22
Manufacturer STARPOWER
File Size 568.89 KB
Description IGBT
Datasheet download datasheet GD30MLX65F1SF_B22 Datasheet
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GD30MLX65F1SF_B22 STARPOWER SEMICONDUCTOR GD30MLX65F1SF_B22 650V/30A in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Fast & soft reverse recovery anti-parallel FWD  Isolated heatsink using DBC technology  PressFIT contact technology Typical Applications  Solar power  UPS  3-level-application IGBT Module IGBT Equivalent Circuit Schematic ©2022 STARPOWER Semiconductor Ltd.
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