GD30MLX65F1SF_B22
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application.
Features
- Low VCE(sat) Trench IGBT technology
- 6μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175o C
- Fast & soft reverse recovery anti-parallel FWD
- Isolated heatsink using DBC technology
- Press FIT contact technology
Typical Applications
- Solar power
- UPS
- 3-level-application
IGBT Module
IGBT
Equivalent Circuit Schematic
©2022 STARPOWER Semiconductor Ltd. 10/18/2022 1/11 preliminary
IGBT Module
Absolute Maximum Ratings TC=25o C unless otherwise noted
T1-T4 IGBT
Symbol VCES VGES
ICM PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage Collector Current @ TC=25o C
@ TC=100o C
Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175o C
D1-D4 Diode
Symbol VRRM IF IFM
Description
Repetitive Peak...
