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GD30PJX65L2S Datasheet IGBT

Manufacturer: STARPOWER

Overview: GD30PJX65L2S STARPOWER SEMICONDUCTOR GD30PJX65L2S 650V/30A PIM in.

General Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Key Features

  • Low VCE(sat) Trench IGBT technology.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated heatsink using DBC technology Typical.

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