GD30PUX65F1S_B22 Datasheet IGBT

Manufacturer: STARPOWER

Overview: GD30PUX65F1S_B22 STARPOWER SEMICONDUCTOR GD30PUX65F1S_B22 650V/30A in.

Datasheet Details

Part number	GD30PUX65F1S_B22
Manufacturer	STARPOWER
File Size	461.97 KB
Description	IGBT
Datasheet	GD30PUX65F1S_B22-STARPOWER.pdf

General Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Key Features

Low VCE(sat) Trench IGBT technology.
6μs short circuit capability.
VCE(sat) with positive temperature coefficient.
Maximum junction temperature 175oC.
Low inductance case.
Fast & soft reverse recovery anti-parallel FWD.
Isolated heatsink using DBC technology.
Pre-applied phase change material Typical.

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