Datasheet4U Logo Datasheet4U.com

GD30PWX65F1S_B22 - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated heatsink using DBC technology.
  • Pre-applied phase change material Typical.

📥 Download Datasheet

Datasheet Details

Part number GD30PWX65F1S_B22
Manufacturer STARPOWER
File Size 551.22 KB
Description IGBT
Datasheet download datasheet GD30PWX65F1S_B22 Datasheet

📁 Similar Datasheet

Other Datasheets by STARPOWER

Full PDF Text Transcription

Click to expand full text
GD30PWX65F1S_B22 STARPOWER SEMICONDUCTOR GD30PWX65F1S_B22 650V/30A in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated heatsink using DBC technology  Pre-applied phase change material Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2021 STARPOWER Semiconductor Ltd.
Published: |