GD30PWX65F1S_B22
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS.
Features
- Low VCE(sat) Trench IGBT technology
- 6μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175o C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated heatsink using DBC technology
- Pre-applied phase change material
Typical Applications
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply
Equivalent Circuit Schematic
IGBT Module
IGBT
©2021 STARPOWER Semiconductor Ltd.
9/15/2021
1/12
A01
IGBT Module
Absolute Maximum Ratings TC=25o C unless otherwise noted
IGBT-inverter
Symbol VCES VGES
ICM PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage Collector Current @ TC=25o C
@ TC=90o C
Pulsed Collector Current tp=1ms Maximum Power...
