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GD35PJX120L3SF - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated heatsink using DBC technology.
  • PressFIT contact technology Typical.

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Datasheet preview – GD35PJX120L3SF

Datasheet Details

Part number GD35PJX120L3SF
Manufacturer STARPOWER
File Size 733.12 KB
Description IGBT
Datasheet download datasheet GD35PJX120L3SF Datasheet
Additional preview pages of the GD35PJX120L3SF datasheet.

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Full PDF Text Transcription

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GD35PJX120L3SF STARPOWER SEMICONDUCTOR GD35PJX120L3SF 1200V/35A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated heatsink using DBC technology  PressFIT contact technology Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2022 STARPOWER Semiconductor Ltd.
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