GD3600SGX170C4S
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as high power converters.
Features
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175o C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- High power converters
- Motor drives
Equivalent Circuit Schematic
IGBT Module
IGBT
©2021 STARPOWER Semiconductor Ltd.
9/19/2021
1/9
B04
IGBT Module
Absolute Maximum Ratings TC=25o C unless otherwise noted
IGBT
Symbol VCES VGES IC ICM PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage Collector Current @ TC=100o C Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175o C
Diode
Symbol VRRM IF IFM
IFSM
I2t
Description
Repetitive Peak Reverse Voltage
Diode...
