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GD400HFX65C2S - IGBT

Datasheet Summary

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology Typical.

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Datasheet preview – GD400HFX65C2S

Datasheet Details

Part number GD400HFX65C2S
Manufacturer STARPOWER
File Size 429.29 KB
Description IGBT
Datasheet download datasheet GD400HFX65C2S Datasheet
Additional preview pages of the GD400HFX65C2S datasheet.

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Full PDF Text Transcription

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GD400HFX65C2S STARPOWER SEMICONDUCTOR GD400HFX65C2S 650V/400A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Automotive application  Hybrid and electric vehicle  Inverter for motor drive Equivalent Circuit Schematic IGBT Module IGBT ©2023 STARPOWER Semiconductor Ltd.
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