STARPOWER GD400MLX65B3ST
IGBT
GENERAL DESCRIPTION
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-applications.FEATURES
● Low VCE(sat) trench IGBT technology● 6μs short circuit capability
● VCE(sat) with positive temperature coefficient
● Maximum junction temperature 175oC
● Low inductance case
● Fast & soft reverse recovery anti-parallel FWD
● Isolated copper baseplate using DBC technology Typical
APPLICATIONS
● Solar power● UPS
● 3-level-applications Equivalent Circuit Schematic IGBT Module IGBT ©2020 STARPOWER Semiconductor Ltd. 6/29/2021 1/11 Preliminary GD400MLX65B3ST IGBT Module
ABSOLUTE MAXIMUM RATINGS
TC=25oC unless otherwise noted T1-T4 IGBT Symbol VCES VGES IC ICM PDDESCRIPTION
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=60oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC D1-D4 Diode Symbol VRRM IF IFMDESCRIPTION
Repetitive Peak Reverse V...