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GD450HTX170C7S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology Typical.

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Datasheet preview – GD450HTX170C7S

Datasheet Details

Part number GD450HTX170C7S
Manufacturer STARPOWER
File Size 507.96 KB
Description IGBT
Datasheet download datasheet GD450HTX170C7S Datasheet
Additional preview pages of the GD450HTX170C7S datasheet.

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Full PDF Text Transcription

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GD450HTX170C7S STARPOWER SEMICONDUCTOR GD450HTX170C7S 1700V/450A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2022 STARPOWER Semiconductor Ltd.
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