STARPOWER GD450MLS65F6S
IGBT
| Part No. | GD450MLS65F6S |
|---|---|
| Datasheet | GD450MLS65F6S Download |
| Manufacturer |  STARPOWER |
| Description | IGBT |
| Buy | Stock & Price |
GENERAL DESCRIPTION
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application.FEATURES
● Low VCE(sat) Trench IGBT technology● VCE(sat) with positive temperature coefficient
● Maximum junction temperature 175 oC
● Fast & soft reverse recovery anti-parallel FWD
● Isolated copper baseplate using DBC technology Typical
APPLICATIONS
● Solar power● 3-level-application Equivalent Circuit Schematic IGBT Module IGBT ©2023 STARPOWER Semiconductor Ltd. 4/26/2023 1/14 B02 GD450MLS65F6S IGBT Module
ABSOLUTE MAXIMUM RATINGS
TC=25oC unless otherwise noted Q1/Q4 IGBT Symbol VCES VGES IC ICM PDDESCRIPTION
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=80oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Q2/Q3 IGBT Symbol VCES VGES IC ICM PDDESCRIPTION
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=80oC Pulsed Collector Curre...
