GD450MLS65F6S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as 3-level-application.

Features

Low VCE(sat) Trench IGBT technology.
VCE(sat) with positive temperature coefficient.
Maximum junction temperature 175 oC.
Fast & soft reverse recovery anti-parallel FWD.
Isolated copper baseplate using DBC technology Typical.

STARPOWER

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Datasheet Details

Part number	GD450MLS65F6S
Manufacturer	STARPOWER
File Size	498.89 KB
Description	IGBT
Datasheet	GD450MLS65F6S Datasheet
Additional preview pages of the GD450MLS65F6S datasheet.

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Full PDF Text Transcription

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GD450MLS65F6S STARPOWER SEMICONDUCTOR GD450MLS65F6S 650V/450A 3-level in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features  Low VCE(sat) Trench IGBT technology  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175 oC  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Solar power  3-level-application Equivalent Circuit Schematic IGBT Module IGBT ©2023 STARPOWER Semiconductor Ltd.

Published: Jun 17, 2025 |