GD50FSX65L2S - IGBT

STARPOWER

General Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Key Features

Low VCE(sat) Trench IGBT technology.
6μs short circuit capability.
VCE(sat) with positive temperature coefficient.
Maximum junction temperature 175oC.
Low inductance case.
Fast & soft reverse recovery anti-parallel FWD.
Isolated heatsink using DBC technology Typical.

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GD50FSX65L2S igbt by STARPOWER - Datasheet Preview

Datasheet Details

Part number	GD50FSX65L2S
Manufacturer	STARPOWER
File Size	486.89 KB
Description	IGBT
Datasheet	GD50FSX65L2S Datasheet

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Full PDF Text Transcription (Reference)

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GD50FSX65L2S STARPOWER SEMICONDUCTOR GD50FSX65L2S 650V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated heatsink using DBC technology Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2021 STARPOWER Semiconductor Ltd.