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GD50HFT120C1S_T4 Datasheet IGBT

Manufacturer: STARPOWER

Overview: GD50HFT120C1S_T4 STARPOWER SEMICONDUCTOR GD50HFT120C1S_T4 1200V/50A 2 in.

General Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Key Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology Typical.

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