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GD50HFT120C1S_T4 - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology Typical.

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Datasheet preview – GD50HFT120C1S_T4

Datasheet Details

Part number GD50HFT120C1S_T4
Manufacturer STARPOWER
File Size 292.60 KB
Description IGBT
Datasheet download datasheet GD50HFT120C1S_T4 Datasheet
Additional preview pages of the GD50HFT120C1S_T4 datasheet.

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Full PDF Text Transcription

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GD50HFT120C1S_T4 STARPOWER SEMICONDUCTOR GD50HFT120C1S_T4 1200V/50A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2013 STARPOWER Semiconductor Ltd.
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