STARPOWER GD50MLX65F1S
IGBT
| Part No. | GD50MLX65F1S |
|---|---|
| Datasheet | GD50MLX65F1S Download |
| Manufacturer |  STARPOWER |
| Description | IGBT |
| Buy | Stock & Price |
GENERAL DESCRIPTION
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application.FEATURES
● Low VCE(sat) Trench IGBT technology● 6μs short circuit capability
● VCE(sat) with positive temperature coefficient
● Maximum junction temperature 175oC
● Fast & soft reverse recovery anti-parallel FWD
● Isolated heatsink using DBC technology Typical
APPLICATIONS
● Solar power● UPS
● 3-level-application IGBT Module IGBT Equivalent Circuit Schematic ©2018 STARPOWER Semiconductor Ltd. 10/18/2018 1/11 preliminary GD50MLX65F1S IGBT Module
ABSOLUTE MAXIMUM RATINGS
TC=25oC unless otherwise noted T1-T4 IGBT Symbol VCES VGES IC ICM PDDESCRIPTION
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=85oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC D1-D4 Diode Symbol VRRM IF IFMDESCRIPTION
Repetitive Peak Reverse Voltage Diode Continuous Forward C...
