GD50MLX65F1S - IGBT

STARPOWER

General Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as 3-level-application.

Key Features

Low VCE(sat) Trench IGBT technology.
6μs short circuit capability.
VCE(sat) with positive temperature coefficient.
Maximum junction temperature 175oC.
Fast & soft reverse recovery anti-parallel FWD.
Isolated heatsink using DBC technology Typical.

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GD50MLX65F1S igbt by STARPOWER - Datasheet Preview

Datasheet Details

Part number	GD50MLX65F1S
Manufacturer	STARPOWER
File Size	238.18 KB
Description	IGBT
Datasheet	GD50MLX65F1S Datasheet

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Full PDF Text Transcription (Reference)

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GD50MLX65F1S STARPOWER SEMICONDUCTOR GD50MLX65F1S 650V/50A in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Fast & soft reverse recovery anti-parallel FWD  Isolated heatsink using DBC technology Typical Applications  Solar power  UPS  3-level-application IGBT Module IGBT Equivalent Circuit Schematic ©2018 STARPOWER Semiconductor Ltd.