GD50PIK120C6S Datasheet | STARPOWER

Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features - Low VCE(sat) NPT IGBT technology - Low switching loss - 10μs short circuit capability - VCE(sat) with positive temperature coefficient - Fast & soft reverse recovery anti-parallel FWD - Isolated copper baseplate using DBC technology Typical Applications - Inverter for motor drive - AC and DC servo drive amplifier - Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2014 STARPOWER Semiconductor Ltd. 2/19/2014 1/12 DY01 IGBT Module Absolute Maximum Ratings TC=25℃ unless otherwise noted IGBT-inverter Symbol VCES VGES ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25℃ @ TC=95℃ Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=150℃ Diode-inverter Symbol VRRM IF IFM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Diode-rectifier Symbol VRRM IO IFSM I2t Description Repetitive Peak Reverse Voltage Average Output Current 50Hz/60Hz,sine wave Surge Forward Current VR=0V,tp=10ms,Tj=45℃ I2t-value,VR=0V,t p=10ms,Tj=45℃ IGBT-brake Symbol VCES...