GD650HTA75P8HFT - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as hybrid and electric vehicle.

Features

Low VCE(sat) Trench IGBT technology.
Low switching losses.
6μs short circuit capability.
VCE(sat) with positive temperature coefficient.
Maximum junction temperature 175oC.
Low inductance case.
Fast & soft reverse recovery anti-parallel FWD.
Isolated copper pinfin baseplate using Si3N4 AMB technology.
PressFIT contact technology Typical.

STARPOWER

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Datasheet Details

Part number	GD650HTA75P8HFT
Manufacturer	STARPOWER
File Size	548.36 KB
Description	IGBT
Datasheet	GD650HTA75P8HFT Datasheet
Additional preview pages of the GD650HTA75P8HFT datasheet.

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GD650HTA75P8HFT STARPOWER SEMICONDUCTOR GD650HTA75P8HFT 750V/650A 6 in one-package IGBT Module IGBT General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle.

Published: Jun 17, 2025 |