GD650HTA75P8HFT
GD650HTA75P8HFT is IGBT manufactured by STARPOWER.
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle.
Features
- Low VCE(sat) Trench IGBT technology
- Low switching losses
- 6μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175o C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper pinfin baseplate using Si3N4 AMB technology
- Press FIT contact technology
Typical Applications
- Automotive application
- Hybrid and electric vehicle
- Inverter for motor drive
Equivalent Circuit Schematic
©2025 STARPOWER Semiconductor Ltd. 1/17/2025 1/11 Preliminary
IGBT Module
Absolute Maximum Ratings TF=25o C unless otherwise noted
IGBT
Symbol
Description
Values
Unit
VCES
Collector-Emitter Voltage
VGES
Gate-Emitter Voltage
±20
Implemented Collector Current
Collector Current @ TF=80o C
ICRM
Repetitive Peak Collector Current tp limited by...
