STARPOWER GD660HTX75P6SB
IGBT
| Part No. | GD660HTX75P6SB |
|---|---|
| Datasheet | GD660HTX75P6SB Download |
| Manufacturer |  STARPOWER |
| Description | IGBT |
| Buy | Stock & Price |
GENERAL DESCRIPTION
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle.FEATURES
● Low VCE(sat) Trench IGBT technology● Low switching losses
● 6μs short circuit capability
● VCE(sat) with positive temperature coefficient
● Maximum junction temperature 175oC
● Low inductance case
● Fast & soft reverse recovery anti-parallel FWD
● Isolated copper baseplate using DBC technology Typical
APPLICATIONS
● Automotive application● Hybrid and electric vehicle
● Inverter for motor drive Equivalent Circuit Schematic IGBT Module IGBT ©2019 STARPOWER Semiconductor Ltd. 11/9/2019 1/10 Preliminary GD660HTX75P6SB IGBT Module
ABSOLUTE MAXIMUM RATINGS
TC=25oC unless otherwise noted IGBT Symbol VCES VGES ICN IC ICM PDDESCRIPTION
Collector-Emitter Voltage Gate-Emitter Voltage Implemented Collector Current Collector Current @ TC=90oC Pulsed Collector Current tp=1ms Maximum Power Diss...
