GD75FFK120C6SD Datasheet | STARPOWER

Description STARPOWER IGBT Power Module provides ultra low conduction and switching loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features - NPT IGBT technology - Low switching loss - 10μs short circuit capability - VCE(sat) with positive temperature coefficient - Fast & soft reverse recovery anti-parallel FWD - Isolated copper baseplate using DBC technology Typical Applications - Inverter for motor drive - AC and DC servo drive amplifier - Uninterruptible power supply ©2011 STARPOWER Semiconductor Ltd. 7/18/2011 1/9 Rev.A IGBT Module Absolute Maximum Ratings TC=25℃ unless otherwise noted Symbol VCES VGES ICM IF IFM PD Tjmax TSTG VISO Mounting Torque Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25℃ @ TC=80℃ Pulsed Collector Current tp=1ms Diode Continuous Forward Current @ TC=80℃ Diode Maximum Forward Current tp=1ms Maximum Power Dissipation @ Tj=150℃ Maximum Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min Mounting Screw:M5 GD75FFK120C6SD 1200 ±20 130 75 150 75 150 571 150 -40 to +125 2500 3.0 to 6.0 Units V V A A A W ℃ ℃ V N.m Electrical Characteristics of IGBT TC=25℃ unless otherwise noted Off Characteristics Symbol V(BR)CES ICES IGES Parameter Collector-Emitter Breakdown Voltage Collector Cut-Off Current Gate-Emitter Leakage Current On Characteristics Symbol...