GD75FSA120L3S Datasheet | STARPOWER

Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features - Low VCE(sat) Trench IGBT technology - 8μs short circuit capability - VCE(sat) with positive temperature coefficient - Maximum junction temperature 175o C - Low inductance case - Fast & soft reverse recovery anti-parallel FWD - Isolated heatsink using DBC technology Typical Applications - Inverter for motor drive - AC and DC servo drive amplifier - Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2024 STARPOWER Semiconductor Ltd. 10/28/2024 1/9 B01 IGBT Module Absolute Maximum Ratings TH=25o C unless otherwise noted IGBT Symbol VCES VGES ICN IC ICRM Description Collector-Emitter Voltage Gate-Emitter Voltage Implemented Collector Current Collector Current @ TH=65o C Repetitive Peak Collector Current tp limited by Tvjop Diode Symbol VRRM IF IFRM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Repetitive Peak Forward Current tp limited by Tvjop Module Symbol Tvjmax Tvjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min Value Unit ±20...