GD75HFU120C1S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as UPS and SMPS.

Features

Low VCE(sat) NPT IGBT technology.
Low switching losses.
10μs short circuit capability.
VCE(sat) with positive temperature coefficient.
Low inductance case.
Fast & soft reverse recovery anti-parallel FWD.
Isolated copper baseplate using DBC technology Equivalent Circuit Schematic Typical.

STARPOWER

📥 Download Datasheet

Datasheet Details

Part number	GD75HFU120C1S
Manufacturer	STARPOWER
File Size	268.02 KB
Description	IGBT
Datasheet	GD75HFU120C1S Datasheet

📁 Similar Datasheet

GD75188 - Quadruple Line Drivers (LG)
GD75189 - QUADRUPLE LINE RECEIVERS (ETC)
GD75189A - QUADRUPLE LINE RECEIVERS (ETC)
GD751SD - SURFACE MOUNT SCHOTTKY BARRIER DIODE (GTM)
GD75232 - Multiple RS-232 Drivers and Receivers (Texas Instruments)
GD75323 - MULTIPLE RS-232 DRIVERS AND RECEIVERS (Texas Instruments)
GD74HC00 - QUAD 2-INPUT NAND GATES (ETC)
GD74HC113 - DUAL J-K FLIP-FLOP (ETC)
GD74HC133 - 13-INPUT NAND GATE (ETC)
GD74HC148 - 8-TO-3 LINE PRIORITY ENCODER (ETC)

Other Datasheets by STARPOWER

Full PDF Text Transcription

Click to expand full text

GD75HFU120C1S STARPOWER SEMICONDUCTORTM GD75HFU120C1S Molding Type Module 1200V/75A 2 in one-package IGBT Module IGBT General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as UPS and SMPS. Features  Low VCE(sat) NPT IGBT technology  Low switching losses  10μs short circuit capability  VCE(sat) with positive temperature coefficient  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Equivalent Circuit Schematic Typical Applications  UPS  Switching mode power supplies  Electronic welders ©2011 STARPOWER Semiconductor Ltd. 2/25/2011 1/9 Rev.

Published: Jun 19, 2025 |