GD75PIY120C6SNF Datasheet PDF

GENERAL DESCRIPTION

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS.

FEATURES

● Low VCE(sat) Trench IGBT technology
● 10μs short circuit capability
● VCE(sat) with positive temperature coefficient
● Maximum junction temperature 175oC
● Low inductance case
● Fast & soft reverse recovery anti-parallel FWD
● Isolated copper baseplate using DBC technology
● PressFIT contact technology Typical

APPLICATIONS

● Inverter for motor drive
● AC and DC servo drive amplifier
● Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2021 STARPOWER Semiconductor Ltd. 5/30/2021 1/13 A01 GD75PIY120C6SNF IGBT Module

ABSOLUTE MAXIMUM RATINGS

TC=25oC unless otherwise noted IGBT-inverter Symbol VCES VGES IC ICM PD

DESCRIPTION

Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipati...