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GD75PIY120C6SNF - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology.
  • PressFIT contact technology Typical.

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Datasheet Details

Part number GD75PIY120C6SNF
Manufacturer STARPOWER
File Size 728.45 KB
Description IGBT
Datasheet download datasheet GD75PIY120C6SNF Datasheet

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Full PDF Text Transcription

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GD75PIY120C6SNF STARPOWER SEMICONDUCTOR GD75PIY120C6SNF 1200V/75A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology  PressFIT contact technology Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2021 STARPOWER Semiconductor Ltd.
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