GD800HFA120C2S_B20 - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Features

Low VCE(sat) Trench IGBT technology.
VCE(sat) with positive temperature coefficient.
Maximum junction temperature 175oC.
Low inductance case.
Fast & soft reverse recovery anti-parallel FWD.
Isolated copper baseplate using DBC technology Typical.

STARPOWER

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Datasheet Details

Part number	GD800HFA120C2S_B20
Manufacturer	STARPOWER
File Size	402.21 KB
Description	IGBT
Datasheet	GD800HFA120C2S_B20 Datasheet
Additional preview pages of the GD800HFA120C2S_B20 datasheet.

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Full PDF Text Transcription

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GD800HFA120C2S_B20 STARPOWER SEMICONDUCTOR GD800HFA120C2S_B20 1200V/800A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2022 STARPOWER Semiconductor Ltd.

Published: Jun 19, 2025 |