GD800HFA120C2S_B20
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS.
Features
- Low VCE(sat) Trench IGBT technology
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175o C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply
Equivalent Circuit Schematic
IGBT Module
IGBT
©2022 STARPOWER Semiconductor Ltd.
9/30/2022
1/9
B02
IGBT Module
Absolute Maximum Ratings TC=25o C unless otherwise noted
IGBT
Symbol VCES VGES
IC ICM PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Transient Gate-Emitter Voltage Collector Current @ TC=25o C
@ TC=95o C Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175o C
Diode
Symbol VRRM...
