GD800HFA120C6SD - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as hybrid and electric vehicle.

Features

Low VCE(sat) Trench IGBT technology.
Short circuit capability.
VCE(sat) with positive temperature coefficient.
Maximum junction temperature 175oC.
Low inductance case.
Fast & soft reverse recovery anti-parallel FWD.
Isolated copper baseplate using DBC technology Typical.

STARPOWER

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Datasheet Details

Part number	GD800HFA120C6SD
Manufacturer	STARPOWER
File Size	479.87 KB
Description	IGBT
Datasheet	GD800HFA120C6SD Datasheet
Additional preview pages of the GD800HFA120C6SD datasheet.

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Full PDF Text Transcription

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GD800HFA120C6SD STARPOWER SEMICONDUCTOR GD800HFA120C6SD 1200V/800A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features  Low VCE(sat) Trench IGBT technology  Short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Hybrid and electric vehicle  Inverter for motor drive  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2024 STARPOWER Semiconductor Ltd.

Published: Jun 17, 2025 |