STARPOWER GD800HFA120C6SD
IGBT
GENERAL DESCRIPTION
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle.FEATURES
● Low VCE(sat) Trench IGBT technology● Short circuit capability
● VCE(sat) with positive temperature coefficient
● Maximum junction temperature 175oC
● Low inductance case
● Fast & soft reverse recovery anti-parallel FWD
● Isolated copper baseplate using DBC technology Typical
APPLICATIONS
● Hybrid and electric vehicle● Inverter for motor drive
● Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2024 STARPOWER Semiconductor Ltd. 4/16/2024 1/9 B02 GD800HFA120C6SD IGBT Module
ABSOLUTE MAXIMUM RATINGS
TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PDDESCRIPTION
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tvj=175oC Diode Symbol VRRM IF IFM IFSM I2t Descript...