GD800HFY120C3S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as high power converters.

Features

Low VCE(sat) Trench IGBT technology.
10μs short circuit capability.
VCE(sat) with positive temperature coefficient.
Maximum junction temperature 175oC.
Low inductance case.
Fast & soft reverse recovery anti-parallel FWD.
Isolated copper baseplate using DBC technology Typical.

STARPOWER

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Datasheet Details

Part number	GD800HFY120C3S
Manufacturer	STARPOWER
File Size	180.07 KB
Description	IGBT
Datasheet	GD800HFY120C3S Datasheet
Additional preview pages of the GD800HFY120C3S datasheet.

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Full PDF Text Transcription

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GD800HFY120C3S STARPOWER SEMICONDUCTOR GD800HFY120C3S 1200V/800A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as high power converters. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  High Power Converters  Motor Drivers  AC Inverter Drives Equivalent Circuit Schematic IGBT Module IGBT ©2017 STARPOWER Semiconductor Ltd.

Published: Aug 1, 2025 |