GD800HTX65P4S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as hybrid and electric vehicle.

Features

Low VCE(sat) Trench IGBT technology.
Low switching losses.
6μs short circuit capability.
VCE(sat) with positive temperature coefficient.
Maximum junction temperature 175oC.
Low inductance case.
Fast & soft reverse recovery anti-parallel FWD.
Isolated copper pinfin baseplate using DBC technology Typical.

STARPOWER

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Datasheet Details

Part number	GD800HTX65P4S
Manufacturer	STARPOWER
File Size	297.49 KB
Description	IGBT
Datasheet	GD800HTX65P4S Datasheet
Additional preview pages of the GD800HTX65P4S datasheet.

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Full PDF Text Transcription

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GD800HTX65P4S STARPOWER SEMICONDUCTOR GD800HTX65P4S 650V/800A 6 in one-package IGBT Module IGBT General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features  Low VCE(sat) Trench IGBT technology  Low switching losses  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper pinfin baseplate using DBC technology Typical Applications  Hybrid and electric vehicle  Inverter for motor drive  Uninterruptible power supply Equivalent Circuit Schematic ©2018 STARPOWER Semiconductor Ltd.

Published: Aug 1, 2025 |