STARPOWER GD820HTA75P6HT
IGBT
GENERAL DESCRIPTION
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle.FEATURES
● Low VCE(sat) Trench IGBT technology● Low switching losses
● 6μs short circuit capability
● VCE(sat) with positive temperature coefficient
● Maximum junction temperature 175oC
● Low inductance case
● Fast & soft reverse recovery anti-parallel FWD
● Isolated copper pinfin baseplate using DBC technology Typical
APPLICATIONS
● Automotive application● Hybrid and electric vehicle
● Inverter for motor drive Equivalent Circuit Schematic ©2023 STARPOWER Semiconductor Ltd. 2/24/2023 1/11 Preliminary GD820HTA75P6HT IGBT Module
ABSOLUTE MAXIMUM RATINGS
TF=25oC unless otherwise noted IGBT Symbol VCES VGES ICN IC ICM PDDESCRIPTION
Collector-Emitter Voltage Gate-Emitter Voltage Implemented Collector Current Collector Current @ TF=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @...