MD13HTC75P6HE
Description
STARPOWER MOSFET Power Module provides very low RDS(on) as well as optimized intrinsic diode. It’s designed for the applications such as hybrid and electric vehicle.
Features
- Si C power MOSFET
- Low RDS(on)
- Optimized intrinsic reverse diode
- Low inductance case avoid oscillations
- Isolated copper pinfin baseplate using Si3N4 AMB technology
Typical Applications
- Automotive application
- Hybrid and electric vehicle
- Inverter for motor drive
Equivalent Circuit Schematic
©2022 STARPOWER Semiconductor Ltd.
5/19/2022
1/10
B02
Si C MOSFET Module
Absolute Maximum Ratings TF=25o C unless otherwise noted
MOSFET
Symbol VDSS VGSSmax VGSSop ID IDM
Description
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage Drain Current @ TF=75o C Pulsed Drain Current, t P limited by Tjmax Maximum Power Dissipation @ TF=75o C Tj=175o C
Body Diode
Symbol
Description
Source Current @ TF=75o C
Module
Symbol Tjmax Tjop TSTG VISO
Description
Maximum...
