MD16HTS75P6HET
Description
STARPOWER MOSFET Power Module provides very low RDS(on) as well as optimized intrinsic diode. It’s designed for the applications such as hybrid and electric vehicle.
Features
- Si C power MOSFET
- High blocking voltage with low RDS(on)
- Easy to parallel and simple to drive
- Low inductance case avoid oscillations
- Isolated copper pinfin baseplate using Si3N4 AMB technology
Typical Applications
- Automotive application
- Hybrid and electric vehicle
- Inverter for motor drive
Equivalent Circuit Schematic
©2025 STARPOWER Semiconductor Ltd.
2/20/2025
1/9
B01
Si C MOSFET Module
Absolute Maximum Ratings TF=25o C unless otherwise noted
MOSFET
Symbol VDSS VGSSmax VGSSop ID IDRM
Description
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage Drain Curren @ TF=75o C Repetitive Peak Drain Current tp=1ms Maximum Power Dissipation @ TF=75o C Tvj=175o C
Body Diode
Symbol
Description
Source Current @ TF=75o C
Module
Symbol Tvjmax Tvjop TSTG...
