MTP3N55 - High Voltage Power MOSFET

Datasheet Details

Part number	MTP3N55
Manufacturer	STI
File Size	25.73 KB
Description	High Voltage Power MOSFET
Datasheet	MTP3N55 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MTP3N55	Power Field Effect Transistor	Motorola
MTP3N50	Power Field Effect Transistor	Motorola
MTP3N50E	TMOS POWER FET	Motorola
MTP3N50E	TMOS E-FET	ON Semiconductor
MTP3N50E	N-Channel MOSFET	INCHANGE

Other Datasheets by STI

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220 TYPE: MTP3N55 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain – Source Voltage Drain – Gate Voltage Drain Current – Continuous Drain Current – Pulsed Gate – Source Voltage Power Dissipation Inductive Current Operating and Storage Temperature Lead Temperature From Case VDSS VDGR ID IDM VGS PD IL TJ & Tstg TL 550 550 3.0 10 ±20 75 -65 to +150 275 Vdc Vdc Adc Adc Vdc Watts Adc °C °C ELECTRICAL CHARACTERISTICS TA @ 25° C Parameters Symbol Test Conditions Drain Source BVDSS ID = .25mA Breakdown Voltage Gate Threshold Voltage VGS(th) ID = 1.0mA ID = 1.