MTP3N55 Datasheet | STI

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://.semi-tech-inc. CASE OUTLINE: TO-220 TYPE: MTP3N55 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain - Source Voltage Drain - Gate Voltage Drain Current - Continuous Drain Current - Pulsed Gate - Source Voltage Power Dissipation Inductive Current Operating and Storage Temperature Lead Temperature From Case VDSS VDGR ID IDM VGS PD IL TJ & Tstg TL 550 550 3.0 10 ±20 75 -65 to +150 275 Vdc Vdc Adc Adc Vdc Watts Adc °C °C ELECTRICAL CHARACTERISTICS TA @ 25° C Parameters Symbol Test Conditions Drain Source BVDSS ID = .25m A Breakdown Voltage Gate Threshold Voltage VGS(th) ID = 1.0m A ID = 1.0m A, TJ = 100°C Gate - Body Leakage IGSS VGS = 20V Current Zero Gate Voltage IDSS VDS = 550V Drain Current VDS = 440V, T J = 125°C On State Drain Current ID(on) Drain Source On Resistance Forward Transconductance Drain-Source On Voltage Drain Source On Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance r DS(on) g FS VDS(on) VDS(on) Ciss Coss Crss VDS = 25V, f = 1 MHz ID = 1.5A, VGS = 10V, ID = 1.5A, VDS = 15V, ID = 3.0A VGS = 10V ID = 1.5A, VGS = 10V TJ = 100°C Min 550 2.0 1.5 Typ Max Unit Vdc Vdc n A m A m A Adc 4.5 4.0 100 0.2 1.0 2.5 1.5 9.0 7.5 Ohms mhos Vdc Vdc Vdc 1000 p F 300 80 p F p F Page 1 of 2 TYPE:MTP3N55 Drain Source Diode Characteristics Forward On Voltage Reverse Recovery Time Forward Turn-On Time Total Gate Charge Gate - Source Charge Gate - Drain Charge VDS=440V, ID=3.0A, VDS=10V IS =3.0A Symbol VSD trr ton Qg Qgs Qgd 16 8.0 8.0 18 Min Typ 1.1 165 Max Units Vdc ns ns n C n C n C Switching Characteristics Turn-On Time Turn-Off Time Delay Time (Turn On) Rise Time Delay Time (Turn Off) Fall Time VDD = 25V, ID = 1.5A Rgen = 50Ω Symbol ton toff td(on) tr td(off) tf Min Typ Max Units 50 100 180 80 ns ns ns ns Thermal Characteristics Junction To Case Junction To Ambient Internal...