STMC SD6030AD
FAST RECOVER EPITAXIAL DIODE
FEATURES
● Planar epitaxial chips● Using high temperature Pt diffusion process
● Very short recovery time
● Extremely low switching losses
● Low IRM values
● Soft recovery behaviour
● 100% tested
APPLICATIONS
● Diode for high frequency switching devices● Anti saturation diode
● Snubber diode
● Free wheeling diode in converters and motor control circuits
● Rectifiers in switch mode power supplies (SMPS)
● Inductive heating and melting
● Uninterruptible power supplies (UPS)
● Ultrasonic cleaners and welders VRRM = 300 V IFAVM = 60 A VF(typ)=1.1V(IF=30A,TVJ=25℃) trr <40 ns(IF = 1 A; di/dt = 200 A/s) Package TO3P
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VRRM IF(AV) IFRM Peak Repetitive Reverse Voltage Diode Continuous Forward Current ( TC=100 ℃) Repetitive Peak Surge Current (20kHz Square Wave) IFSM TJ Nonrepetitive Peak Surge Current for Per Diode (Halfwave 1 Phase 60Hz) Operating Junction Temperature Range TSTG Storage Temperature Range Value 300 60 120 300 -55 to +150 -55 to +150 Units V A A A ℃ ℃ELECTRICAL SPECIFICATIONS
(TJ = 25 °C unless otherwise specified for Per Diode) Symbol VR VF IRM Parameter Test Conditions Min.