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POWER MOSFET
Features
500V,24A N-Channel MOSFET RDS(on)(typ.)=0.18Ω@VGS=10V High ruggedness Fast switching 100% avalanche tested Exceptional dv/dt capability
Applications
Electric Welding Computer Power LCD Power Switching application Motor drive
SF24N50A
Absolute Maximum Ratings
Symbol VDSS VGS
ID
IDM EAS PD
TJ TSTG
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TC=25℃) Continuous Drain Current(TC=100℃) Pulsed Drain Current(Note 1 ) Single Pulsed Avalanche Energy(Note 2) Maximum Power Dissipation ( TC=25 ℃) Maximum Junction Temperature Storage Temperature Range
Value 500 ±30 24 19 96 1100 290 150 -55 to +150
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2.Starting TJ=25℃,L=3.