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POWER MOSFET
Features
80V,80A N-Channel MOSFET RDS(on)(typ.)=6.5mΩ@VGS=10V High ruggedness Fast switching 100% avalanche tested Exceptional dv/dt capability
60V
SF80N80
Applications
Switching application Motor drive
SF80N80P SF80N80F
SF80N80I SF80N80D
Absolute Maximum Ratings
Symbol VDSS VGS
ID
IDM EAS
PD
TJ TSTG
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TC=25℃) Continuous Drain Current(TC=100℃) Pulsed Drain Current(Note 1 ) Single Pulsed Avalanche Energy(Note 2) Maximum Power Dissipation ( TC=25 ℃) Maximum Power Dissipation ( TC=100℃) Operating Junction Temperature Range Storage Temperature Range
Value 80 ±25 80 65 320 256 150 75
-55 to +185 -55 to +185
Notes:
1.