STMC SF80N80
POWER MOSFET
FEATURES
● 80V,80A N-Channel MOSFET● RDS(on)(typ.)=6.5mΩ@VGS=10V
● High ruggedness
● Fast switching
● 100% avalanche tested
● Exceptional dv/dt capability 适用于 60V 电动车控制器 SF80N80
APPLICATIONS
● Switching application● Motor drive SF80N80P SF80N80F SF80N80I SF80N80D
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS VGS ID IDM EAS PD TJ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TC=25℃) Continuous Drain Current(TC=100℃) Pulsed Drain Current(Note 1 ) Single Pulsed Avalanche Energy(Note 2) Maximum Power Dissipation ( TC=25 ℃) Maximum Power Dissipation ( TC=100℃) Operating Junction Temperature Range Storage Temperature Range Value 80 ±25 80 65 320 256 150 75 -55 to +185 -55 to +185 Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2.Starting TJ=25℃,L=1.0mH,RG=25Ω,ID=37A,VGS=10V 青岛矽科微电子有限公司 st_market@163.com Units V V A A A mJ W W ℃ ℃ 1/6 Thermal data Symbol Rth J-C Parameter Thermal Resistance, Junction to case SF80N80 Max. 1 Units ℃/...