STMicroelectronics 1.5KE56CA
The curves of the figure 3 are specified for a junction temperature of 25 °C before surge. The given results may be extrapolated for other junction temperatures by using the following formula : ∆VBR = αT * (Tamb -25) * VBR(25°C).| Part No. | 1.5KE56CA |
|---|---|
| Datasheet | 1.5KE56CA Download |
| Manufacturer |  STMicroelectronics |
| Description | TRANSILTM |
| Buy | Stock & Price |
FEATURES
PEAK PULSE POWER : 1500 W (10/1000µs) BREAKDOWN VOLTAGE RANGE : From 6.8V to 440 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZEDDESCRIPTION
Transil diodes provide high overvoltage protection by clamping action. Their instantaneousresponse to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. CB429ABSOLUTE MAXIMUM RATINGS
(Tamb = 25°C) Symbol PPP P IFSM Tstg Tj TL Parameter Peak pulse power dissipation (see note 1) Power dissipation on infinite heatsink Non repetitive surge peak forward current for unidirectional types Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s at 5mm from case Tj initial = Tamb Tamb = 75°C tp = 10ms Tj initial = Tamb Value 1500 5 200 - 65 to + 175 175 230 Unit W W A °C °C °C Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCES Symbol Rth (j-l) Rth (j-a) Junction to leads Junction to ambient on printed circuit.
