Datasheet4U Logo Datasheet4U.com

10LN80K5 - N-channel Power MOSFET

General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code STD10LN80K5 VDS 800 V RDS(on) max. ID 0.63 Ω 8A Figure 1: Internal schematic diagram.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
10L08A (10Lxxx) Monilithic Crystal Filters Onelight
10L08B (10Lxxx) Monilithic Crystal Filters Onelight
10L15A (10Lxxx) Monilithic Crystal Filters Onelight
10L15B (10Lxxx) Monilithic Crystal Filters Onelight
10LZ47 SM10LZ47 Toshiba Semiconductor

Other Datasheets by STMicroelectronics

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD10LN80K5 N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code STD10LN80K5 VDS 800 V RDS(on) max. ID 0.63 Ω 8A Figure 1: Internal schematic diagram  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Order code STD10LN80K5 Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.