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10N3L - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ V technology.

The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class.

Figure 1.

Key Features

  • Order code STL10N3LLH5 VDSS 30 V RDS(on) max < 0.019 Ω 1. The value is rated according Rthj-pcb.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • Very low switching gate charge.
  • High avalanche ruggedness.
  • Low gate drive power losses ID 9 A (1).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL10N3LLH5 N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT™ 3.3x3.3 STripFET™ V Power MOSFET Features Order code STL10N3LLH5 VDSS 30 V RDS(on) max < 0.019 Ω 1. The value is rated according Rthj-pcb ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses ID 9 A (1) Applications ■ Switching applications ■ Automotive Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. PowerFLAT™ 3.3x3.3 Figure 1. Internal schematic diagram 123 4 SSS G DDD D 876 5 BOTTOM VIEW AM10124V1 Table 1.