10NM60N
Features
Order code
VDS @TJ max.
STD10NM60N STF10NM60N STP10NM60N STU10NM60N
650 V
RDS(on) max.
0.55 Ω
ID PTOT
10 A
70 W 25 W
70 W
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Figure 1. Internal schematic diagram
Applications
'7$%
- Switching applications
Description
- 6
Order code
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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Table 1. Device summary
Marking
Package
Packing
STD10NM60N STF10NM60N STP10NM60N STU10NM60N
10NM60N 10NM60N 10NM60N 10NM60N
DPAK TO-220FP
TO-220 IPAK
Tape and reel Tube Tube Tube
December 2015
This is information on a product in full production.
Doc ID028726 Rev 1
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Contents
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