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10NM60N - N-Channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Order code VDS @TJ max. STD10NM60N STF10NM60N STP10NM60N STU10NM60N 650 V RDS(on) max. 0.55 Ω ID PTOT 10 A 70 W 25 W 70 W.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance Figure 1. Internal schematic diagram.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data 7$%   DPAK 7$%    TO-220    TO-220FP 7$%    IPAK Features Order code VDS @TJ max. STD10NM60N STF10NM60N STP10NM60N STU10NM60N 650 V RDS(on) max. 0.55 Ω ID PTOT 10 A 70 W 25 W 70 W • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Figure 1. Internal schematic diagram Applications ' 7$% • Switching applications Description *  6  Order code These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.