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10P10F6 - P-Channel Power MOSFET

General Description

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure.

The resulting Power MOSFET exhibits AM11258v1 very low RDS(on) in all packages.

Key Features

  • Order code VDS STD10P10F6 -100 V.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss RDS(on) max. 0.18 Ω ID -10 A.

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Full PDF Text Transcription for 10P10F6 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 10P10F6. For precise diagrams, and layout, please refer to the original PDF.

STD10P10F6 Datasheet P-channel -100 V, 0.36 Ω typ., -10 A STripFET F6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS STD10P10F6 ...

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TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS STD10P10F6 -100 V • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss RDS(on) max. 0.18 Ω ID -10 A Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits AM11258v1 very low RDS(on) in all packages.

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