Datasheet4U Logo Datasheet4U.com

110N10F7 - N-Channel MOSFET

Description

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • PowerFLAT 5x6 Order code VDS RDS(on) max. STL110N10F7 100 V 6 mΩ.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness ID 107 A PTOT 136 W D(5, 6, 7, 8) 8 76 5.

📥 Download Datasheet

Datasheet preview – 110N10F7

Datasheet Details

Part number 110N10F7
Manufacturer STMicroelectronics
File Size 872.47 KB
Description N-Channel MOSFET
Datasheet download datasheet 110N10F7 Datasheet
Additional preview pages of the 110N10F7 datasheet.

📁 Similar Datasheet

  • 110N10F7 - N-Channel MOSFET (VBsemi)
  • 110N2 - N-Channel MOSFET (VBsemi)
  • 1100 - Semi-Custom IC (Cherry Semiconductor)
  • 1100-8-104-01 - Header Connector (Methode Electronics)
  • 1100-8-1xx-01 - Header Connector (Methode Electronics)
  • 11016 - PRN110 (California Micro Devices)
  • 1102B - (1102xB - 1110xB) Single Phase Bridge (VMI)
  • 1102C - (1102xC - 1110xC) Single Phase Bridge (VMI)
  • 1102D - (1102xD - 1110xD) Single Phase Bridge (VMI)
  • 1102E - (1102xE - 1110xE) Single Phase Bridge (VMI)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STL110N10F7 N-channel 100 V, 5 mΩ typ., 107 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features PowerFLAT 5x6 Order code VDS RDS(on) max. STL110N10F7 100 V 6 mΩ • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 107 A PTOT 136 W D(5, 6, 7, 8) 8 76 5 Applications • Switching applications G(4) Description S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Published: |