110N10F7
Features
Power FLAT 5x6
Order code
RDS(on) max.
STL110N10F7
100 V
6 mΩ
- Among the lowest RDS(on) on the market
- Excellent Fo M (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
ID 107 A
PTOT 136 W
D(5, 6, 7, 8)
8 76 5
Applications
- Switching applications
G(4)
Description
S(1, 2, 3)
12 34 Top View
AM15540v2
This N-channel Power MOSFET utilizes STrip FET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Product status link STL110N10F7
Product summary
Order code
STL110N10F7
Marking
Package
Power FLAT 5x6
Packing
Tape and reel
DS9392
- Rev 6
- March 2020 For further information contact your local STMicroelectronics sales office.
.st.
Electrical ratings
Table 1. Absolute maximum...
