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112N65M5 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout.

Key Features

  • Order code VDS at TJ max. STY112N65M5 710 V.
  • Extremely low RDS(on).
  • Low gate charge and input capacitance.
  • Excellent switching performance.
  • 100% avalanche tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STY112N65M5 Datasheet N-channel 650 V, 19 mΩ typ., 96 A MDmesh M5 Power MOSFET in a Max247 package Max247 3 2 1 D(2, TAB) Features Order code VDS at TJ max. STY112N65M5 710 V • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested Applications • Switching applications RDS(on) max. 22 mΩ ID 96 A G(1) S(3) Description This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.