112N65M5 - N-channel Power MOSFET

Datasheet Summary

Description

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout.

Features

Order code VDS at TJ max. STY112N65M5 710 V.
Extremely low RDS(on).
Low gate charge and input capacitance.
Excellent switching performance.
100% avalanche tested.

STMicroelectronics

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Datasheet Details

Part number	112N65M5
Manufacturer	STMicroelectronics
File Size	296.48 KB
Description	N-channel Power MOSFET
Datasheet	112N65M5 Datasheet
Additional preview pages of the 112N65M5 datasheet.

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STY112N65M5 Datasheet N-channel 650 V, 19 mΩ typ., 96 A MDmesh M5 Power MOSFET in a Max247 package Max247 3 2 1 D(2, TAB) Features Order code VDS at TJ max. STY112N65M5 710 V • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested Applications • Switching applications RDS(on) max. 22 mΩ ID 96 A G(1) S(3) Description This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.

Published: Sep 28, 2023 |