Datasheet Details
| Part number | 11NM65N |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 627.38 KB |
| Description | STD11NM65N |
| Datasheet |
 11NM65N Datasheet
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General Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
Key Features
- Order codes VDSS @ TJmax RDS(on) max ID STD11NM65N STF11NM65N STFI11NM65N STP11NM65N 710 V < 0.455 Ω 11 A.
- 100% avalanche tested.
- Low input capacitance and gate charge.
- low gate input resistance Figure 1. Internal schematic diagram ' Ć7$% .