11NM65N - STD11NM65N

Product Overview

STMicroelectronics

Datasheet Details

Part number	11NM65N
Manufacturer	STMicroelectronics
File Size	627.38 KB
Description	STD11NM65N
Datasheet	11NM65N Datasheet
Additional preview pages of the 11NM65N datasheet.

Product details

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

Order codes VDSS @ TJmax RDS(on) max ID STD11NM65N STF11NM65N STFI11NM65N STP11NM65N 710 V < 0.455 Ω 11 A.
100% avalanche tested.
Low input capacitance and gate charge.
low gate input resistance Figure 1. Internal schematic diagram 'Ć7$%.

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Published: Aug 19, 2015 |