11NM65N
Overview
6 $0Y These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
- 100% avalanche tested
- Low input capacitance and gate charge
- low gate input resistance Figure
- Internal schematic diagram ' Ć7$%
