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12NM60N Datasheet N-Channel MOSFET

Manufacturer: STMicroelectronics

General Description

This series of devices implements second generation MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most demanding high efficiency converters.

Overview

STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.

Key Features

  • www. DataSheet4U. com Type VDSS (@Tjmax) RDS(on) ID STB12NM60N STB12NM60N-1 STF12NM60N STP12NM60N STW12NM60N 650V 650V 650V 650V 650V < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω 10A 10A 10A(1) 10A 10A 1. Limited only by maximum temperature allowed.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.